Overview on Error Correction Code Technologies for NAND Flash Memory

doi:10.3969/j.issn.1006-2475.2017.11.007

Abstract

Abstract: This paper presented a review on the error correction code (ECC) technologies for NAND flash memory. Firstly, we introduced the internal structure and error mechanism of NAND flash. Then, we introduced the current four ECC technologies including Hamming code, RS code, BCH code and LDPC code and presented the research status. Lastly, the analysis and comparison among these four technologies were presented.

Key words: error correction code, NAND flash memory, BCH code, LDPC code

CLC Number:

TP333.5

PENG Fu-lai1,2, YU Zhi-lou1,2, CHEN Nai-kuo1,2, GENG Shi-hua1,2, BI Yan-shan1,2. Overview on Error Correction Code Technologies for NAND Flash Memory[J]. Computer and Modernization, doi: 10.3969/j.issn.1006-2475.2017.11.007.

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